FEMTO-ST-Franche Comté Electronique Mécanique Thermique et Optique - Sciences et Technologies
Video de présentationFrom basic research to industrial partnership
Deep Reactive Ion Etching (DRIE) ALCATEL
Deep Reactive Ion Etching (DRIE) ALCATEL
Silicon can be etched in an anisotropic (or isotropic) and dry way with the technology called “deep RIE”. This method combines deposition and etching plasma assisted processes. While the silicon is etched, the process enables to deposit a fluorinated component on the pattern walls in order to passivate them. Etching-deposition cycles with given gases and time enable to etch deeply and anisotropically the silicon independently of its orientation.
Characteristics:
Parameters that can be adjusted: pressure (1 to 10Pa), gas flow (50 to 500sccm), wafer holder temperature, RF source power (1000 to 2000W), wafer holder power (up to 200 W), SF6/C4F8 cycle time; masks used: resist, silica, metal (nickel, chromium, aluminium); wafer holder specified for 4 inch wafers
Realisations:
microresonator
electrostatic microactuator
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