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Ionic Reactive Etching (RIE) with fluorinated chemistry: PLASSYS

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Ionic Reactive Etching (RIE) with fluorinated chemistry: PLASSYS
Bâti de gravure ionique réactive fluoré PLASSYS


Characteristics:
RF power: 300W max; gases: SF6, O2, CHF3, C2F6; substrate: 4 inch max on a silica plate; end-attack detector: laser interferometry; etched materials: Si, SiO2, Si3N4, Quartz, Ti, LiNbO3

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