Research departments

Wafer Bonding EVG machine


Wafer Bonding EVG machine
Machine de Wafer Bonding EVG



Contact :

Sylwester BARGIEL
TEMIS Sciences Building
03 81 66 63 02 (Office)
sylwester.bargiel@femto-st.fr


Location :

TEMIS Cleanroom
Wafer-bonding Area

Principle :

The wafer bonding machine enables to perform bondings between different types of materials (silicon, glass, etc.). It is fitted with a positioning system enabling an accurate placement of the wafers to be bonded.



Technical characteristics :

Possible bonding process :

• Anodic bonding Pyrex - Si
• Thermo-compression bonding by means of a intermediate layer (glass-frit, epoxy glue, gold, eutectic, etc.)
• Silicon Direct bonding (Si - Si)


Setting parameters :

• Temperature (up to 550°C)
• Force (up to 7000N)
• Voltage (up to 2000V)
• Vacuum: 10-3mbar
• 3 or 4 inch wafers
• Alignment: chuck compatible with the alignment system



Achieved results :

Sandwich Si-LN-Si-bonding

Sandwich Si / LiNbO3 / Si for acoustic applications