Research departments

Spectroscopic ellipsometer


Spectroscopic ellipsometer Jobin-Yvon
(UVISEL-NIR)
Ellipsomètre spectroscopique Jobin-Yvon (UVISEL-NIR)


Contact :

Laurent ROBERT
TEMIS Sciences Building – Office N1-21
03 81 66 66 47 (Office)
03 63 08 21 04 (Characterization Area)
laurent.robert@femto-st.fr

Location :

TEMIS cleanroom
Characterization Area



Principle :

Ellipsometry is a non-destructive method for measuring the index and the thickness of thin dielectric layers. This technique enables to obtain the optical response of a material by studying the polarization ellipse modification of an incident beam during the beam reflection on the sample surface.

Fonctionnement_ellipsomètre



Technical characteristics :

- Spectral measurement range : 260 < lambda< 2100 nm
- Spot size (microspot system) : 50, 100 µm and 1 mm
- Xe source : 75 W
- Analysis system fitted with a thermally stabilized photoelastic modulator set on an automatic rotary stage (modulation frequency : 50 kHz)
- HR460 high resolution double output monochromator with near-infrared extension (typical resolution: 0.1 nm)
- 2 detectors: a photomultiplicator and an InGaAs detector
- Sample holder : 6 inch diameter with an adjustment system (in rotation...)
- Manual height adjustment, maximum thickness : 20 mm;
- Thickness and index extraction softwares: : DeltaPsi2 (version 2.4.3)
- Possibility of transmission measurements (phi0 = 90°)

Measurable materials :

- Dielectric tranparent materials : SiO2, TiO2, Ta2O5, Si3N4, SiOxNy , polymers …
- Semi-conductors : Si, AsGa, …
- Metals