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Triple-tube oven for oxidation and thermal treatments


Triple-tube oven for oxidation and thermal treatments

Photo_Four triple tube


Contact :

Alexandru TODORAN
TEMIS Sciences building - Office N1-21
03 81 66 66 47 (Office)
03 63 08 23 77 (Deposition Area)
alexandru .todoran@femto-st.fr


Location :

TEMIS cleanroom
Deposition and ovens Area







General description :

The equipment consists of three horizontal tubular ovens (1 m long) that can be each simultaneously and independently heated. The positioning of 3, 4 and 6 inch wafers in the center of the oven is ensured by 25 wafer quartz carriers adapted to these dimensions.

Nacelle_Four triple tube



Principle :

The three tubes are dedicated to various thermal treatments as follows :

1. Tube 1 is reserved for dry and wet thermal oxidation of silicon. Thermal oxidation is a natural process that involves the diffusion of silicon through the already formed silica (SiO2). Therefore the layer thickness as a function of time follows a logarithmic low and, starting from 100 nm, it can be estimated with a precision of 5%.

Technical specifications :

- Tube diameter: 20 cm
- Type of oxidation: Dry/Wet
- Oxidation temperature: 1000° - 1100°C
- Maximum temperature: 1200°C
- Maximum temperature increase rate: 100°C/min
- Gas: Oxygen

2. Tube 2 is reserved for LiNbO3 diffusion in titanium thin films. Because LiNbO3 easily contaminates the oven walls, other materials are prohibited.

Technical specifications :

- Tube diameter: 17 cm
- Diffusion temperature: 500°C
- Maximum temperature: 1200°C
- Maximum temperature increase rate: 100°C/min
- Gas: Oxygen

3. Tube 3 is used for annealing treatments and glass reflow under controlled environment.

Technical specifications :

- Tube diameter: 17 cm
- Annealing temperature: 500°C
- Maximum temperature: 1200°C
- Maximum temperature increase rate: 100°C/min
- Gas: Argon and Nitrogen