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Deep Reactive Ion Etching Silicon (RAPIER SPTS)


Deep reactive Ion Etching Silicon (RAPIER SPTS)

Photo Equipement RAPIER SPTS



Contact :

Djaffar BELHARET
TEMIS Sciences Building - Office N1-22
03 81 66 55 83 (Office)
03 63 08 23 74 (Dry Etching Area)
djaffar.belharet@femto-st.fr


Location :

TEMIS cleanroom
Dry Etching Area











Principle :

Silicon can be etched in an anisotropic (or isotropic) and dry way with the technology called “deep RIE”. This method combines deposition and etching plasma assisted processes. While the silicon is etched, the process enables to deposit a fluorinated component on the pattern walls in order to passivate them. Etching-deposition cycles with given gases and time enable to etch deeply and anisotropically the silicon independently of its orientation.


Technical specifications :

- ICP source power : 5.5 kW RF
- Bias source power : 1.5 kW RF
- Electrostatic clamping with cooled wafer holder (0 to 40°C)
- Available gas : SF6, C4F8, Ar, He, N2 and O2
- Wafer size : pieces up to 4 inch
- Real-time endpoint detection system (Claritas)


Etched materials :


This machine is only dedicated to the silicon and silica (<1µm) etching.


Table of etching performances :

Performances de gravure DRIE RAPIER SPTS



Achieved results :

Exemple de gravure DRIE SPTS RAPIER

Deep anistropic etching of a Si wafer (etching depth = 1.5mm)

Exemple 2 de gravure DRIE SPTS RAPIER

Deep anistropic etching of a SOI wafer with an almost zero notching