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Equipment for resist stripping and surface treatment


Equipment for resist stripping and surface treatment (Nanoplas)

Equipement Nanoplas


Contact :

Djaffar BELHARET
Building Temis Sciences – Office N1-22
03 81 66 55 83 (Office)
03 63 08 23 74 (Dry Etching Area)
djaffar.belharet@femto-st.fr


Location :

TEMIS cleanroom
Dry Etching Area



This equipment allows for the photoresist stripping by a continuous plasma. Additionally it is used to "treat or functionalize" the surface of materials.

Principle :


A gas is introduced into the etching chamber. It is ionized in a reactive plasma via a radio frequency generator. The plasma then produces a physical-chemical etching of the material. This results in volatile reaction products which are exhausted by the pumping system.



Technical specifications :

- ICP source power : 600W RF
- Heated wafer holder (60 to 200°C)
- Available gas : O2, Ar, SF6 et CF4
- Wafer size : pieces up to 4 inches



Types of  applications :

- Photoresist stripping
- Surface preparation and treatment
- Surface functionalization
- Depassivation of Teflon coating



Achieved results :

Exemple de réalisation avec Nanoplas

PDMS bonding on glass wafer after surface functionnalization