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Reactive Ion Etching (RIE) with fluorinated chemistry: PLASSYS

Reactive Ion Etching (RIE) with fluorinated chemistry: PLASSYS
Bâti de gravure ionique réactive fluoré PLASSYS

Contact :

TEMIS Sciences building – Office N1-22
03 81 66 55 83 (Office)
03 63 08 23 74 (Dry etching Area)

Location :

TEMIS cleanroom
Dry etching Area

Principle :

This is a physico-chemical etching because it combines ionic bombardment, mechanical energy and a chemical reaction between ionized gas and sample surfaces. The gas atoms react with the sample ones to form new volatile species which will be evacuated by the pumping system. It is also known as a reactive ion etching because it takes place within a plasma, contrary to wet etching. The different parameters adjustment (pressure, power, polarisation...) enables to determine more or less the etching process choice. In fact, a low polarisation associated to high pressure and temperature favour the chemical process. On the opposite, a high polarisation voltage and a low pressure favour the mechanical bombardment. Isotropic and anisotropic etchings can be obtained: chemical reactions between gas and sample produce a selective and isotropic etching whereas the surface erosion, due to ionic bombardments, is anisotropic and non-selective (vertical sidewalls can be achieved by favouring mechanical etching due to ions and materials shocks). By choosing the reactive gas, several materials can be etched (see below).

Technical specifications :

- RF plasma source : 300W max
- Substrate : 4 inch max on a silica plate
- Available gases : SF6, CHF3, C2F6 et O2
- End-attack detector: laser interferometry

Etched materials :

Si, SiO2, Si3N4, Quartz, LiNbO3, AlN, Glass, Ti, Resist ...

Achieved results :

Cristal phononique en niobate de lithium

LiNbO3 Phononic Crystal etched by RIE (Holes period : 10 µm)

Nanostrictures_Graveur RIE

LiNbO3 nanostructures