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Deep Reactive Ion Etching Silicon (RAPIER SPTS)

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Deep Reactive Ion Etching Silicon (RAPIER SPTS)

Deep reactive Ion Etching Silicon (RAPIER SPTS)



Contact :

Djaffar BELHARET
TEMIS Sciences Building - Office N1-22
03 81 66 55 83 (Office)
03 63 08 23 74 (Dry Etching Area)
djaffar.belharet@femto-st.fr


Location :

TEMIS cleanroom
Dry Etching Area











Principle :

Silicon can be etched in an anisotropic (or isotropic) and dry way with the technology called “deep RIE�?. This method combines deposition and etching plasma assisted processes. While the silicon is etched, the process enables to deposit a fluorinated component on the pattern walls in order to passivate them. Etching-deposition cycles with given gases and time enable to etch deeply and anisotropically the silicon independently of its orientation.


Technical specifications :

- ICP source power : 5.5 kW RF
- Bias source power : 1.5 kW RF
- Electrostatic clamping with cooled wafer holder (0 to 40°C)
- Available gas : SF6, C4F8, Ar, He, N2 and O2
- Wafer size : pieces up to 4 inch
- Real-time endpoint detection system (Claritas)


Etched materials :


This machine is only dedicated to the silicon and silica (<1µm) etching.


Table of etching performances :



Achieved results :