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Equipment for resist stripping and surface treatment
Equipment for resist stripping and surface treatment (Nanoplas)
Contact :
Djaffar BELHARET
Building Temis Sciences – Office N1-22
03 81 66 55 83 (Office)
03 63 08 23 74 (Dry Etching Area)
djaffar.belharet@femto-st.fr
Location :
TEMIS cleanroom
Dry Etching Area
This equipment allows for the photoresist stripping by a continuous plasma. Additionally it is used to "treat or functionalize" the surface of materials.
Principle :
A gas is introduced into the etching chamber. It is ionized in a reactive plasma via a radio frequency generator. The plasma then produces a physical-chemical etching of the material. This results in volatile reaction products which are exhausted by the pumping system.
Technical specifications :
- ICP source power : 600W RF
- Heated wafer holder (60 to 200°C)
- Available gas : O2, Ar, SF6 et CF4
- Wafer size : pieces up to 4 inches
Types of applications :
- Photoresist stripping
- Surface preparation and treatment
- Surface functionalization
- Depassivation of Teflon coating
Achieved results :
