The institute

You are here


SI 500 D ICP Deposition System

Deposition of silicon nitride, silicon oxynitride and silicon oxide
at low temperature by plasma deposition system

Contact :

Bâtiment TEMIS Sciences – Bureau N3-12
03 63 08 63 02 (Bureau)
03 63 08 23 77 (Salle Dépôt)

Localization :

Cleanroom TEMIS

Overview :

High-density plasma technology is becoming increasingly attractive for the deposition of dielectric films such as silicon nitride (SiNx), silicon dioxide (SiOx), silicon oxynitride (SiONx) and hydrogenated amorphous silicon (a-Si:H). In particular, inductively-coupled plasma chemical vapor deposition (ICPECVD) offers a great advantage for low temperature processing over plasma-enhanced chemical vapor deposition (PECVD) for a range of devices including compound semiconductors (InP, GaAs ...). The material properties of these films have been investigated as a function of ICP source power, RF chuck power, chamber pressure, gas chemistry, and temperature.
The ICPECVD films will be compared to PECVD films in terms of roughness, homogeneity, refractive index, density and other film characteristics. Compare to the traditional high temperature technology, the fabrication of MOEMS-MEMS/ NEMS and semiconductors at lower temperature have many advantages (i.e. the co-integration).

The SI 500 D plasma enhanced deposition tool is configured to deposit SiOx, SiNx, SiONx, and a-Si:H films in a temperature range from room temperature up to 350 °C with lower hydrogen content. The large range of thin dielectric properties also allows addressing optical applications. A brief insight into the possibilities of this kind of gases mixtures, on thin layers properties with different stoichiometries, has been investigated. A database is available at FEMTO-ST for the applications in Optoelectronics, Microelectronics and Microsystems


  • Specification of gases process : SiH4, NH3, O2, Ar
  • Vaccuum system : Pressure <10-6 mbar 
  • ICP source :
    • Pressure: 1 Pa ...20 Pa
    • Power: 100 ... 1200 W
    • Plasma density: up to 5*1011 cm-3
  • RF power supply : @13.56 MHz, 1200 W

Achieved results :

Lift-Off @ 80°C :

SiO2 with conformal coverage :

State of the Oxyde :
SiO, Si2O, Si2O3, Si02
State of the Nitride : SiN, Si3N, Si3N2, Si3N4
State of the Silicon Oxyde nitride : Si2N0, Si2N02, Si2N2O, SiNO, Si2N03,Si2N3O