You are here
Deep Reactive Ion Etching (DRIE) ALCATEL
Deep Reactive Ion Etching (DRIE) (ALCATEL)
Contact :
Djaffar BELHARET
Temis Sciences building – Office N1-22
03 81 66 55 83 (Office)
03 63 08 23 74 (Dry Eching Area)
djaffar.belharet@femto-st.fr
Location :
TEMIS cleanroom
Dry Etching area
Principle :
Silicon can be etched in an anisotropic (or isotropic) and dry way with
the technology called “deep RIE�?. This method combines deposition and
etching plasma assisted processes. While the silicon is etched, the
process enables to deposit a fluorinated component on the pattern walls
in order to passivate them. Etching-deposition cycles with given gases
and time enable to etch deeply and anisotropically the silicon
independently of its orientation.
Technical specifications :
- ICP source power : 2kW RF
- bias source power : 0.5 kW RF
- Mechanical clamping with cooled wafer holder (-20 to 30°C)
- Wafer size : pieces up to 4 inch
- Available gas : SF6, C4F8, He and O2
Etched materials :
This equipement is dedicated to the Si and SiO2 (<1µm) etching.
Table of etching performances :
Achieved results :
